| PART |
Description |
Maker |
| CY62136CV18 CY62136CV18LL-55BAI CY62136CV18LL-55BV |
128K X 16 STANDARD SRAM, 70 ns, PBGA48
128K x 16 Static RAM
Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY62126DV30L CY62126DV30L-55ZSI CY62126DV30L-70BVI |
1-Mbit (64K x 16) Static RAM 1兆位4K的16）静态RAM
Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-32
Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1381C-117AI CY7C1383C-100BZI CY7C1383C CY7C138 |
Memory : Sync SRAMs
18-Mb (512K x 36/1M x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
| CY62147CV33LL-70BVI CY62147CV25 CY62147CV25LL-55BA |
Memory : MicroPower SRAMs
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1049BV33-25ZC CY7C1049BV33L-12VC CY7C1049BV33L |
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 5FT 512K X 8 STANDARD SRAM, 17 ns, PDSO44
512K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| LT1309 |
500kHz Micropower DC/DC Converter for Flash Memory
From old datasheet system
|
Linear
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS816218 GS816236BB-250I GS816218BB-150 GS816218BB |
18Mb Burst SRAMs
1M x 18, 512K x 36 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
http://
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| LT1301 LT1301-15 |
Micropower High Efficiency 5V/12V Step-Up DC/DC Converter for Flash Memory
|
Linear Technology
|
